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  ? 2006 microchip technology inc. ds22019a-page 1 mcp1406/07 features ? high peak output current: 6.0a (typ.) ? low shoot-through/cross-conduction current in output stage ? wide input supply voltage operating range: - 4.5v to 18v ? high capacitive load drive capability: - 2500 pf in 20 ns - 6800 pf in 40 ns ? short delay times: 40 ns (typ.) ? matched rise/fall times ? low supply current: - with logic ? 1 ? input ? 130 a (typ.) - with logic ? 0 ? input ? 35 a (typ.) ? latch-up protected: will withstand 1.5a reverse current ? logic input will withstand negative swing up to 5v ? pin compatible with the tc4420/tc4429 devices ? space-saving 8-pin soic, pdip and 8-pin 6x5 dfn packages applications ? switch mode power supplies ? pulse transformer drive ? line drivers ? motor and solenoid drive general description the mcp1406/07 devices are a family of buffers/mosfet drivers th at feature a single-output with 6a peak drive current capability, low shoot-through current, matched rise/fall times and propagation delay times. these devices are pin-compatible and are improved versions of the tc4420/tc4429 mosfet drivers. the mcp1406/07 mosfet drivers can easily charge and discharge 2500 pf gate capacitance in under 20 ns, provide low enough impedances in both the on and off states to ensure the mosfets intended state will not be affected, even by large transients. the input to the mcp1406/07 may be dr iven directly from either ttl or cmos (3v to 18v). these devices are highly latch-up resistant under any conditions within their power and voltage ratings. they are not subject to damage when up to 5v of noise spiking (of either polarity) occurs on the ground pin. all terminals are fully protect against electrostatic discharge (esd) up to 4 kv. the mcp1406/07 single-output 6a mosfet driver family is offered in both surface-mount and pin- through-hole packages with a -40c to +125c temperature rating, making it useful in any wide temperature range application. package types 1 2 3 45 6 7 8 v dd v dd out out gnd gnd input nc 8-pin pdip/soic mcp1407 mcp1406 v dd out out gnd 1 2 3 4 5 6 7 8 8-pin 6x5 dfn v dd gnd input nc v dd gnd gnd input out 123 4 5 5-pin to-220 v dd out out gnd mcp1407 mcp1406 v dd out out gnd tab is common to v dd note 1: duplicate pins must both be connected for proper operation. 2: exposed pad of the dfn package is electrically isolated. 6a high-speed power mosfet drivers
mcp1406/07 ds22019a-page 2 ? 2006 microchip technology inc. functional block diagram (1) effective input c = 25 pf mcp1406 inverting mcp1407 non-inverting input gnd v dd 300 mv 4.7v inverting non-inverting note 1: unused inputs should be grounded. 130 a output output
? 2006 microchip technology inc. ds22019a-page 3 mcp1406/07 1.0 electrical characteristics absolute maximum ratings ? supply voltage ................................................................+20v input voltage ............................... (v dd + 0.3v) to (gnd ? 5v) input current (v in >v dd )................................................50 ma ? notice: stresses above those listed under "maximum ratings" may cause permanent dam age to the device. this is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational sections of this specification is not intended. exposure to maximum rating conditions for extended periods may affect device reliability. dc characteristics electrical specifications: unless otherwise indicated, t a = +25c, with 4.5v v dd 18v. parameters sym min typ max units conditions input logic ? 1 ?, high input voltage v ih 2.4 1.8 ? v logic ? 0 ?, low input voltage v il ?1.30.8v input current i in ?10 ? 10 a 0v v in v dd input voltage v in -5 ? v dd +0.3 v output high output voltage v oh v dd ? 0.025 ? ? v dc test low output voltage v ol ? ? 0.025 v dc test output resistance, high r oh ?2.12.8 i out = 10 ma, v dd = 18v output resistance, low r ol ?1.52.5 i out = 10 ma, v dd = 18v peak output current i pk ?6?av dd = 18v (note 2) continuous output current i dc 1.3 a note 2, note 3 latch-up protection with- stand reverse current i rev ? 1.5 ? a duty cycle 2%, t 300 sec. switching time (note 1) rise time t r ?2030ns figure 4-1, figure 4-2 c l = 2500 pf fall time t f ?2030ns figure 4-1, figure 4-2 c l = 2500 pf delay time t d1 ?4055ns figure 4-1, figure 4-2 delay time t d2 ?4055ns figure 4-1, figure 4-2 power supply supply voltage v dd 4.5 ? 18.0 v power supply current i s ? 130 250 a v in = 3v i s ? 35 100 a v in = 0v note 1: switching times ensured by design. 2: tested during characterization, not production tested. 3: valid for at and mf packages only. t a = +25c
mcp1406/07 ds22019a-page 4 ? 2006 microchip technology inc. dc characteristics (over ope rating temperature range) temperature characteristics electrical specifications: unless otherwise indicated, oper ating temperature range with 4.5v v dd 18v. parameters sym min typ max units conditions input logic ? 1 ?, high input voltage v ih 2.4 ? ? v logic ? 0 ?, low input voltage v il ??0.8v input current i in ?10 ? +10 a 0v v in v dd input voltage v in -5 ? v dd +0.3 v output high output voltage v oh v dd ? 0.025 ? ? v dc test low output voltage v ol ? ? 0.025 v dc test output resistance, high r oh ?3.05.0 i out = 10 ma, v dd = 18v output resistance, low r ol ?2.35.0 i out = 10 ma, v dd = 18v switching time (note 1) rise time t r ?2540ns figure 4-1, figure 4-2 c l = 2500 pf fall time t f ?2540ns figure 4-1, figure 4-2 c l = 2500 pf delay time t d1 ?5065ns figure 4-1, figure 4-2 delay time t d2 ?5065ns figure 4-1, figure 4-2 power supply supply voltage v dd 4.5 ? 18.0 v power supply current i s ? 200 500 a v in = 3v ? 50 150 v in = 0v note 1: switching times ensured by design. electrical specifications: unless otherwise noted, all parameters apply with 4.5v v dd 18v. parameters sym min typ max units conditions temperature ranges specified temperature range t a ?40 ? +125 c maximum junction temperature t j ? ? +150 c storage temperature range t a ?65 ? +150 c package thermal resistances thermal resistance, 8l-6x5 dfn ja ? 33.2 ? c/w typical four-layer board with vias to ground plane thermal resistance, 8l-pdip ja ?125 ?c/w thermal resistance, 8l-soic ja ?155 ?c/w thermal resistance, 5l-to-220 ja ?71 ?c/w
? 2006 microchip technology inc. ds22019a-page 5 mcp1406/07 2.0 typical performance curves note: unless otherwise indicated, t a = +25c with 4.5v <= v dd <= 18v. figure 2-1: rise time vs. supply voltage. figure 2-2: rise time vs. capacitive load. figure 2-3: rise and fall times vs. temperature. figure 2-4: fall time vs. supply voltage. figure 2-5: fall time vs. capacitive load. figure 2-6: propagation delay vs. supply voltage. note: the graphs and tables provided following this note ar e a statistical summary based on a limited number of samples and are provided for informational purposes onl y. the performance charac teristics listed herein are not tested or guaranteed. in some graphs or t ables, the data presented ma y be outside the specified operating range (e.g., outside specified power suppl y range) and therefore outs ide the warranted range. 0 20 40 60 80 100 120 4 6 8 10 12 14 16 18 supply voltage (v) rise time (ns) 100 pf 4,700 pf 1,000 pf 6,800 pf 2,500 pf 10,000 pf 8,200 pf 0 10 20 30 40 50 60 70 80 100 1000 10000 capacitive load (pf) rise time (ns) 5v 15v 10v 0 5 10 15 20 25 30 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) rise and fall time (ns) v dd = 18v t rise t fall 0 10 20 30 40 50 60 70 80 4 6 8 10 12 14 16 18 supply voltage (v) fall time (ns) 100 pf 4,700 pf 1,000 pf 6,800 pf 2,500 pf 10,000 pf 8,200 pf 0 10 20 30 40 50 60 70 100 1000 10000 capacitive load (pf) fall time (ns) 5v 15v 10v 35 45 55 65 75 85 4 6 8 1012141618 supply voltage (v) propagation delay (ns) v in = 5v t d1 t d2
mcp1406/07 ds22019a-page 6 ? 2006 microchip technology inc. typical performance curves (continued) note: unless otherwise indicated, t a = +25c with 4.5v <= v dd <= 18v. figure 2-7: propagation delay time vs. input amplitude. figure 2-8: propagation delay time vs. temperature. figure 2-9: quiescent current vs. supply voltage. figure 2-10: quiescent current vs. temperature. figure 2-11: input threshold vs. supply voltage. figure 2-12: input threshold vs. temperature. 25 50 75 100 125 150 175 200 2345678910 input amplitude (v) propagation delay (ns) v dd = 12v t d1 t d2 30 35 40 45 50 55 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) propagation delay (ns) v dd = 18v v in = 5v t d1 t d2 0 20 40 60 80 100 120 140 160 180 4 6 8 1012141618 supply voltage (v) quiescent current (a) input = 1 input = 0 0 50 100 150 200 250 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) quiescent current (a) input = low v dd = 18v input = high 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 4 6 8 1012141618 supply voltage (v) input threshold (v) v hi v lo 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -40 -25 -10 5 20 35 50 65 80 95 110 125 temperature ( o c) input threshold (v) v dd = 12v v hi v lo
? 2006 microchip technology inc. ds22019a-page 7 mcp1406/07 typical performance curves (continued) note: unless otherwise indicated, t a = +25c with 4.5v <= v dd <= 18v. figure 2-13: supply current vs. capacitive load. figure 2-14: supply current vs. capacitive load. figure 2-15: supply current vs. capacitive load. figure 2-16: supply current vs. frequency. figure 2-17: supply current vs. frequency. figure 2-18: supply current vs. frequency. 0 25 50 75 100 125 150 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 18v 50 khz 0 25 50 75 100 125 150 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 12v 50 khz 2 mhz 0 10 20 30 40 50 60 70 80 90 100 100 1000 10000 capacitive load (pf) supply current (ma) 500 khz 1 mhz 200 khz 100 khz v dd = 6v 50 khz 2 mhz 0 20 40 60 80 100 120 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 18v 2,500 pf 10,000 pf 0 10 20 30 40 50 60 70 80 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 12v 2,500 pf 10,000 pf 0 5 10 15 20 25 30 35 40 10 100 1000 frequency (khz) supply current (ma) 100 pf 4,700 pf 1,000 pf 6,800 pf v dd = 6v 2,500 pf 10,000 pf
mcp1406/07 ds22019a-page 8 ? 2006 microchip technology inc. typical performance curves (continued) note: unless otherwise indicated, t a = +25c with 4.5v <= v dd <= 18v. figure 2-19: output resistance (output high) vs. supply voltage. figure 2-20: output resistance (output low) vs. supply voltage. figure 2-21: crossover energy vs. supply voltage. 1 2 3 4 5 6 7 4 6 8 10 12 14 16 18 supply voltage (v) r out-hi ( : ) v in = 2.5v (mcp1407) v in = 0v (mcp1406) t j = +125 o c t j = +25 o c 1 2 3 4 5 6 7 4 6 8 10 12 14 16 18 supply voltage (v) r out-lo ( : ) v in = 0v (mcp1407) v in = 2.5v (mcp1406) t j = +125 o c t j = +25 o c 1.e-09 1.e-08 1.e-07 4 6 8 1012141618 supply voltage (v) crossover energy (a*sec) 10 -8 10 -9 10 -10
? 2006 microchip technology inc. ds22019a-page 9 mcp1406/07 3.0 pin descriptions the descriptions of the pins are listed in table 3-1. table 3-1: pin function table (1) 3.1 supply input (v dd ) v dd is the bias supply input for the mosfet driver and has a voltage range of 4.5v to 18v. this input must be decoupled to ground with local capacitors. the bypass capacitors provide a localized low- impedance path for the peak currents that are to be provided to the load. 3.2 control input (input) the mosfet driver input is a high-impedance, ttl/cmos-compatible input. the input also has hysteresis between the high and low input levels, allowing them to be driven from slow rising and falling signals, and to provide noise immunity. 3.3 ground (gnd) ground is the device return pin. the ground pin should have a low impedance connection to the bias supply source return. high peak currents will flow out the ground pin when the capacitive load is being discharged. 3.4 cmos push-pull output (output) the output is a cmos push-p ull output that is capable of sourcing peak currents of 6a (v dd = 18v). the low output impedance ensures the gate of the external mosfet will stay in the intended state even during large transients. these output also has a reverse current latch-up rating of 1.5a. 3.5 exposed metal pad the exposed metal pad of the dfn package is not internally connected to any potential. therefore, this pad can be connected to a ground plane or other copper plane on a printed circuit board to aid in heat removal from the package. 3.6 to-220 metal tab the metal tab on the to-220 package is at v dd potentail. this metal tab is not intended to be the v dd connection to mcp1406/07. v dd should be supplied using the supply input pin of the to-220. 8-pin pdip, soic 8-pin dfn 5-pin to-220 symbol description 11?v dd supply input 2 2 1 input control input 3 3 ? nc no connection 4 4 2 gnd ground 5 5 4 gnd ground 6 6 5 output cmos push-pull output 7 7 ? output cmos push-pull output 883 v dd supply input ?pad? nc exposed metal pad ??tabv dd metal tab at v dd potential note 1: duplicate pins must be connected for proper operation.
mcp1406/07 ds22019a-page 10 ? 2006 microchip technology inc. 4.0 application information 4.1 general information mosfet drivers are high-speed, high current devices which are intended to provide high peak currents to charge the gate capacitance of external mosfets or igbts. in high frequency switching power supplies, the pwm controller may not have the drive capability to directly drive the power mosfet. a mosfet driver like the mcp1406/07 family can be used to provide additional drive current capability. 4.2 mosfet driver timing the ability of a mosfet driver to transition from a fully off state to a fully on state are characterized by the drivers rise time (t r ), fall time (t f ), and propagation delays (t d1 and t d2 ). the mcp1406/07 family of devices is able to make this transition very quickly. figure 4-1 and figure 4-2 show the test circuits and timing waveforms used to verify the mcp1406/07 tim- ing. figure 4-1: inverting driver timing waveform. figure 4-2: non-inverting driver timing waveform. 4.3 decoupling capacitors careful layout and decoupling capacitors are highly recommended when using mosfet drivers. large currents are required to charge and discharge capacitive loads quickly. for example, 2.25a are needed to charge a 2500 pf load with 18v in 20 ns. to operate the mosfet driver over a wide frequency range with low supply impedance, a ceramic and low esr film capacitor are recommended to be placed in parallel between the driver v dd and gnd. a 1.0 f low esr film capacitor and a 0.1 f ceramic capacitor placed between pins 1, 8 and 4, 5 should be used. these capacitors should be placed close to the driver to minimized circuit board parasitics and provide a local source for the required current. 4.4 pcb layout considerations proper pcb layout is important in a high current, fast switching circuit to provide proper device operation and robustness of design. pcb trace loop area and inductance should be minimized by the use of a ground plane or ground trace located under the mosfet gate drive signals, separate analog and power grounds, and local driver decoupling. 0.1 f +5v 10% 90% 10% 90% 10% 90% 18v 1f 0v 0v mcp1406 c l = 2500 pf input input output t d1 t f t d2 output t r v dd = 18v ceramic 90% input t d1 t f t d2 output t r 10% 10% 10% +5v 18v 0v 0v 90% 90% 0.1 f 1f mcp1407 c l = 2500 pf input output v dd = 18v ceramic
? 2006 microchip technology inc. ds22019a-page 11 mcp1406/07 the mcp1406/07 devices have two pins each for v dd , output, and gnd. both pins must be used for proper operation. this also lowers path inductance which will, along with proper decoupling, help minimize ringing in the circuit. placing a ground plane beneath the mcp1406/07 will help as a radiated noise shield as well as providing some heat sinking for power dissipated within the device. 4.5 power dissipation the total internal power dissipation in a mosfet driver is the summation of three separate power dissipation elements. 4.5.1 capacitive load dissipation the power dissipation caused by a capacitive load is a direct function of frequency, total capacitive load, and supply voltage. the power lost in the mosfet driver for a complete charging a nd discharging cycle of a mosfet is: 4.5.2 quiescent power dissipation the power dissipation associated with the quiescent current draw depends upon the state of the input pin. the mcp1406/07 devices have a quiescent current draw when the input is high of 0.13 ma (typ) and 0.035 ma (typ) when the input is low. the quiescent power dissipation is: 4.5.3 operating power dissipation the operating power dissipation occurs each time the mosfet driver output transitions because for a very short period of time both mosfets in the output stage are on simultaneously. this cross-conduction current leads to a power dissipation describes as: p t p l p q p cc ++ = where: p t = total power dissipation p l = load power dissipation p q = quiescent power dissipation p cc = operating power dissipation p l fc t v dd 2 = where: f = switching frequency c t = total load capacitance v dd = mosfet driver supply voltage p q i qh di ql 1 d ? () + () v dd = where: i qh = quiescent current in the high state d = duty cycle i ql = quiescent current in the low state v dd = mosfet driver supply voltage p cc cc f v dd = where: cc = cross-conduction constant (a*sec) f = switching frequency v dd = mosfet driver supply voltage
mcp1406/07 ds22019a-page 12 ? 2006 microchip technology inc. 5.0 packaging information 5.1 package marking information (not to scale) xxxxxxxx xxxxxnnn yyww 8-lead pdip (300 mil) example: mcp1407 e/p^^256 0644 8-lead soic (150 mil) example: xxxxxxxx xxxxyyww nnn 256 mcp1406 e 8-lead dfn example : xxxxxxx xxxxxxx xxyyww nnn mcp1406 e/mf^^ 0644 256 sn^^0644 legend: xx...x customer-specific information y year code (last digit of calendar year) yy year code (last 2 digits of calendar year) ww week code (week of january 1 is week ?01?) nnn alphanumeric traceability code pb-free jedec designator for matte tin (sn) * this package is pb-free. the pb-free jedec designator ( ) can be found on the outer packaging for this package. note : in the event the full microchip part nu mber cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 3 e 3 e 3 e 3 e 3 e 5-lead to-220 xxxxxxxxx xxxxxxxxx yywwnnn example mcp1406 eat^^ 0644256 3 e
? 2006 microchip technology inc. ds22019a-page 13 mcp1406/07 5-lead plastic transistor outline (at) (to-220) note: for the most current package drawings, please se e the microchip packaging specification located at http://www.microchip.com/packaging l h1 q e e1 e c1 j1 f a d (5) ?p ejector pin e3 drawing no. c04-036 notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010" (0.254 mm) per si de. jedec equivalent: to-220 * controlling parameter mold draft angle lead width lead thickness c1 .014 dimension limits overall height lead length overall width lead pitch a l e .540 min e units .060 inches * .022 0.36 0.56 millimeters .190 .560 13.72 min max 4.83 14.22 max .160 4.06 3 7 3 7 overall length d 1.02 0.64 .040 .025 overall lead centers e1 .263 .385 .560 .273 6.68 6.93 .072 1.52 1.83 .415 9.78 10.54 .590 14.22 14.99 through hole diameter p .146 .156 3.71 3.96 j1 base to bottom of lead .090 2.29 .115 2.92 through hole center q .103 2.87 .113 2.62 flag thickness f .045 1.40 .055 1.14 flag length h1 .234 6.55 .258 5.94 space between leads e3 .030 1.02 .040 0.76 revised 08-01-05
mcp1406/07 ds22019a-page 14 ? 2006 microchip technology inc. 8-lead plastic dual flat, no lead package (mf) - 6x5 mm body [dfn-s] note: for the most current package drawings, please se e the microchip packaging specification located at http://www.microchip.com/packaging numb e r of pins pitch ov e rall h e ight standoff contact thickn e ss ov e rall l e ngth ov e rall width expos e d pad l e ngth expos e d pad width contact width contact l e ngth contact-to-expos e d pad units dim e nsion limits n e a a1 a 3 d e d2 e2 b l k 0.80 0.00 3 .90 2.20 0. 3 5 0.50 0.20 8 1.27 bsc 0.85 0.01 0.20 ref 5.00 bsc 6.00 bsc 4.00 2. 3 0 0.40 0.60 ? 1.00 0.05 4.10 2.40 0.48 0.75 ? min nom max millimeters notes: 1. pin 1 visual ind e x f e atur e may vary, but must b e locat e d within th e hatch e d ar e a. 2. packag e may hav e on e or mor e e xpos e d ti e bars at e nds. 3 . significant charact e ristic 4. packag e is saw singulat e d 5. dim e nsioning and tol e rancing p e r asme y14.5m bsc: basic dim e nsion. th e or e tically e xact valu e shown without tol e ranc e s. ref: r e f e r e nc e dim e nsion, usually without tol e ranc e , for information purpos e s only. microchip t e chnology drawing no. c04?122, s e pt. 8, 2006 top view bottom view note 1 exposed pad 1 2 e a 3 a1 a note 2 n d note 1 e2 b e l n d2 2 1 k
? 2006 microchip technology inc. ds22019a-page 15 mcp1406/07 8-lead plastic dual in-line (pa) ? 300 mil body (pdip) note: for the most current package drawings, please se e the microchip packaging specification located at http://www.microchip.com/packaging b1 b a1 a l a2 p e eb c e1 n d 1 2 units inches * millimeters dimension limits min nom max min nom max number of pins n 88 pitch p .100 2.54 top to seating plane a .140 .155 .170 3.56 3.94 4.32 molded package thickness a2 .115 .130 .145 2.92 3.30 3.68 base to seating plane a1 .015 0.38 shoulder to shoulder width e .300 .313 .325 7.62 7.94 8.26 molded package width e1 .240 .250 .260 6.10 6.35 6.60 overall length d .360 .373 .385 9.14 9.46 9.78 tip to seating plane l .125 .130 .135 3.18 3.30 3.43 lead thickness c .008 .012 .015 0.20 0.29 0.38 upper lead width b1 .045 .058 .070 1.14 1.46 1.78 lower lead width b .014 .018 .022 0.36 0.46 0.56 overall row spacing eb .310 .370 .430 7.87 9.40 10.92 mold draft angle top 51015 51015 mold draft angle bottom 51015 51015 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mo ld flash or protrusions shall not exceed .010? (0.254mm) per si de. jedec equivalent: ms-001 drawing no. c04-018 significant characteristic
mcp1406/07 ds22019a-page 16 ? 2006 microchip technology inc. 8-lead plastic small outline (sn) ? narrow, 150 mil body (soic) note: for the most current package drawings, please se e the microchip packaging specification located at http://www.microchip.com/packaging foot angle 048048 15 12 0 15 12 0 mold draft angle bottom 15 12 0 15 12 0 mold draft angle top 0.51 0.42 0.33 .020 .017 .013 b lead width 0.25 0.23 0.20 .010 .009 .008 c lead thickness 0.76 0.62 0.48 .030 .025 .019 l foot length 0.51 0.38 0.25 .020 .015 .010 h chamfer distance 5.00 4.90 4.80 .197 .193 .189 d overall length 3.99 3.91 3.71 .157 .154 .146 e1 molded package width 6.20 6.02 5.79 .244 .237 .228 e overall width 0.25 0.18 0.10 .010 .007 .004 a1 standoff 1.55 1.42 1.32 .061 .056 .052 a2 molded package thickness 1.75 1.55 1.35 .069 .061 .053 a overall height 1.27 .050 p pitch 8 8 n number of pins max nom min max nom min dimension limits millimeters inches * units 2 1 d n p b e e1 h l c 45 a2 a a1 * controlling parameter notes: dimensions d and e1 do not include mold flash or protrusions. mold flash or protrusions shall not exceed .010? (0.254mm) per si de. jedec equivalent: ms-012 drawing no. c04-057 significant characteristic
? 2006 microchip technology inc. ds22019a-page 17 mcp1406/07 appendix a: revision history revision a (december 2006) ? original release of this document.
mcp1406/07 ds22019a-page 18 ? 2006 microchip technology inc. notes:
? 2006 microchip technology inc. ds22019a-page 19 mcp1406/07 product identification system to order or obtain information, e.g., on pricing or de livery, refer to the factory or the listed sales office . device: mcp1406: 6a high-speed mosfet driver, inverting mcp1406t: 6a high-speed mosfet driver, inverting (tape and reel) mcp1407: 6a high-speed mosfet driver, non-inverting mcp1407t: 6a high-speed mosfet driver, non-inverting (tape and reel) temperature range: e = -40c to +125c package: * at = to-220, 5-lead mf = dual, flat, no-lead (6x5 mm body), 8-lead pa = plastic dip, (300 mil body), 8-lead sn = plastic soic (150 mil body), 8-lead * all package offerings are pb free (lead free) examples: a) mcp1406-e/mf: 6a high-speed mosfet driver, inverting 8ld dfn package. b) mcp1406-e/at: 6a high-speed mosfet driver, inverting 5ld to-220 package . c) mcp1406-e/sn: 6a high-speed mosfet driver, inverting 8ld soic package . d) mcp1406-e/p: 6a high-speed mosfet driver, inverting 8ld pdip package . e) mcp1406t-e/mf: tape and reel, 6a high-speed mosfet driver, inverting, 8ld dfn pkg. f) mcp1406t-e/sn: tape and reel, 6a high-speed mosfet driver, inverting, 8ld soic pkg . a) mcp1407-e/mf: 6a high-speed mosfet driver, non-inverting 8ld dfn package. b) mcp1407-e/at: 6a high-speed mosfet driver, non-inverting 5ld to-220 package . c) mcp1407-e/sn: 6a high-speed mosfet driver, non-inverting 8ld soic package . d) mcp1407-e/p: 6a high-speed mosfet driver, non-inverting 8ld pdip package . e) mcp1407t-e/mf: tape and reel, 6a high-speed mosfet driver, non-inverting, 8ld dfn pkg. f) mcp1407t-e/sn: tape and reel, 6a high-speed mosfet driver, non-inverting, 8ld soic pkg . part no. x xx package temperature range device xxx tape & reel
mcp1406/07 ds22019a-page 20 ? 2006 microchip technology inc. notes:
? 2006 microchip technology inc. ds22019a-page 21 information contained in this publication regarding device applications and the like is prov ided only for your convenience and may be superseded by updates. it is your responsibility to ensure that your application me ets with your specifications. microchip makes no representations or warranties of any kind whether express or implied, written or oral, statutory or otherwise, related to the information, including but not limited to its condition, quality, performance, merchantability or fitness for purpose . microchip disclaims all liability arising from this information and its use. use of microchip devices in life support and/or safe ty applications is entirely at the buyer?s risk, and the buyer agrees to defend, indemnify and hold harmless microchip from any and all damages, claims, suits, or expenses resulting fr om such use. no licenses are conveyed, implicitly or ot herwise, under any microchip intellectual property rights. trademarks the microchip name and logo, the microchip logo, accuron, dspic, k ee l oq , micro id , mplab, pic, picmicro, picstart, pro mate, powersmart, rfpic, and smartshunt are registered trademarks of microc hip technology incorporated in the u.s.a. and other countries. amplab, filterlab, migratable memory, mxdev, mxlab, seeval, smartsensor and the embedded control solutions company are registered tradema rks of microchip technology incorporated in the u.s.a. analog-for-the-digital age, a pplication maestro, codeguard, dspicdem, dspicdem.net, dspicworks, ecan, economonitor, fansense, flexrom, fuzzylab, in-circuit serial programming, icsp, icepic, linear active thermistor, mindi, miwi, mpasm , mplib, mplink, pickit, picdem, picdem.net, piclab, pictail, powercal, powerinfo, powermate, powertool, real ice, rflab, rfpicdem, select mode, smart serial, smarttel, total endurance, uni/o, wiperlock and zena are trademarks of microchip technology incorporated in the u.s.a. and other countries. sqtp is a service mark of mi crochip technology incorporated in the u.s.a. all other trademarks mentioned herein are property of their respective companies. ? 2006, microchip technology incorporated, printed in the u.s.a., all rights reserved. printed on recycled paper. note the following details of the code protection feature on microchip devices: ? microchip products meet the specification cont ained in their particular microchip data sheet. ? microchip believes that its family of products is one of the mo st secure families of its kind on the market today, when used i n the intended manner and under normal conditions. ? there are dishonest and possibly illegal meth ods used to breach the code protection fe ature. all of these methods, to our knowledge, require using the microchip pr oducts in a manner outside the operating specif ications contained in microchip?s data sheets. most likely, the person doing so is engaged in theft of intellectual property. ? microchip is willing to work with the customer who is concerned about the integrity of their code. ? neither microchip nor any other semiconduc tor manufacturer can guarantee the security of their code. code protection does not mean that we are guaranteeing the product as ?unbreakable.? code protection is constantly evolving. we at microchip are committed to continuously improving the code protection features of our products. attempts to break microchip?s c ode protection feature may be a violation of the digital millennium copyright act. if such acts allow unauthorized access to your softwa re or other copyrighted work, you may have a right to sue for relief under that act. microchip received iso/ts-16949:2002 certification for its worldwide headquarters, design and wafer fabrication facilities in chandler and tempe, arizona, gresham, oregon and mountain view, california. the company?s quality system processes and procedures are for its pic ? 8-bit mcus, k ee l oq ? code hopping devices, serial eeproms, microperipherals, nonvolatile memory and analog products. in addition, microchip?s quality system for the design and manufacture of development systems is iso 9001:2000 certified.
ds22019a-page 22 ? 2006 microchip technology inc. americas corporate office 2355 west chandler blvd. chandler, az 85224-6199 tel: 480-792-7200 fax: 480-792-7277 technical support: http://support.microchip.com web address: www.microchip.com atlanta duluth, ga tel: 678-957-9614 fax: 678-957-1455 boston westborough, ma tel: 774-760-0087 fax: 774-760-0088 chicago itasca, il tel: 630-285-0071 fax: 630-285-0075 dallas addison, tx tel: 972-818-7423 fax: 972-818-2924 detroit farmington hills, mi tel: 248-538-2250 fax: 248-538-2260 kokomo kokomo, in tel: 765-864-8360 fax: 765-864-8387 los angeles mission viejo, ca tel: 949-462-9523 fax: 949-462-9608 santa clara santa clara, ca tel: 408-961-6444 fax: 408-961-6445 toronto mississauga, ontario, canada tel: 905-673-0699 fax: 905-673-6509 asia/pacific asia pacific office suites 3707-14, 37th floor tower 6, the gateway habour city, kowloon hong kong tel: 852-2401-1200 fax: 852-2401-3431 australia - sydney tel: 61-2-9868-6733 fax: 61-2-9868-6755 china - beijing tel: 86-10-8528-2100 fax: 86-10-8528-2104 china - chengdu tel: 86-28-8665-5511 fax: 86-28-8665-7889 china - fuzhou tel: 86-591-8750-3506 fax: 86-591-8750-3521 china - hong kong sar tel: 852-2401-1200 fax: 852-2401-3431 china - qingdao tel: 86-532-8502-7355 fax: 86-532-8502-7205 china - shanghai tel: 86-21-5407-5533 fax: 86-21-5407-5066 china - shenyang tel: 86-24-2334-2829 fax: 86-24-2334-2393 china - shenzhen tel: 86-755-8203-2660 fax: 86-755-8203-1760 china - shunde tel: 86-757-2839-5507 fax: 86-757-2839-5571 china - wuhan tel: 86-27-5980-5300 fax: 86-27-5980-5118 china - xian tel: 86-29-8833-7250 fax: 86-29-8833-7256 asia/pacific india - bangalore tel: 91-80-4182-8400 fax: 91-80-4182-8422 india - new delhi tel: 91-11-4160-8631 fax: 91-11-4160-8632 india - pune tel: 91-20-2566-1512 fax: 91-20-2566-1513 japan - yokohama tel: 81-45-471- 6166 fax: 81-45-471-6122 korea - gumi tel: 82-54-473-4301 fax: 82-54-473-4302 korea - seoul tel: 82-2-554-7200 fax: 82-2-558-5932 or 82-2-558-5934 malaysia - penang tel: 60-4-646-8870 fax: 60-4-646-5086 philippines - manila tel: 63-2-634-9065 fax: 63-2-634-9069 singapore tel: 65-6334-8870 fax: 65-6334-8850 taiwan - hsin chu tel: 886-3-572-9526 fax: 886-3-572-6459 taiwan - kaohsiung tel: 886-7-536-4818 fax: 886-7-536-4803 taiwan - taipei tel: 886-2-2500-6610 fax: 886-2-2508-0102 thailand - bangkok tel: 66-2-694-1351 fax: 66-2-694-1350 europe austria - wels tel: 43-7242-2244-39 fax: 43-7242-2244-393 denmark - copenhagen tel: 45-4450-2828 fax: 45-4485-2829 france - paris tel: 33-1-69-53-63-20 fax: 33-1-69-30-90-79 germany - munich tel: 49-89-627-144-0 fax: 49-89-627-144-44 italy - milan tel: 39-0331-742611 fax: 39-0331-466781 netherlands - drunen tel: 31-416-690399 fax: 31-416-690340 spain - madrid tel: 34-91-708-08-90 fax: 34-91-708-08-91 uk - wokingham tel: 44-118-921-5869 fax: 44-118-921-5820 w orldwide s ales and s ervice 12/08/06


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